www.siliconstandard.com 1 of 6 SSM02N60P n-channel enhancement-mode power mosfet repetitive-avalanche rated bv dss 600v fast-switching r ds(on) 8 simple drive requirement i d 2a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a e ar repetitive avalanche energy mj t stg t j operating junction temperature range thermal data symbol value unit rthj-c thermal resistance junction-case max. 3.2 /w rthj-a thermal resistance junction-ambient max. 62 /w 130 -55 to 150 parameter 2 2 1.26 parameter rating 600 storage temperature range -55 to 150 6 39 linear derating factor 0.31 2 20 g d s g d s to-220 the to-220 package is widely preferred for commercial and industrial applications. the SSM02N60P is well suited for dc/dc and ac/dc converters in telecom, industrial and consumer applications. re v . 2.01 6/06 /200 3
www.siliconstandard.com 2 of 6 SSM02N60P electrical characteristics @ t j =2 5 o c (unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 600 - - v $ b v dss / $ t j breakdown voltage temperature coefficient reference to 25 # , i d =1ma - 0.6 - v/ # r ds(on) static drain-source on-resistance v gs =10v, i d =1a - - 8 " v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =20v, i d =1a - 0.2 - s i dss drain-source leakage current (t j =25 o c) v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =480v , v gs =0v - - 100 ua i gss gate-source leakage v gs =-- na q g total gate charge 3 i d =2a - 14 - nc q gs gate-source charge v ds =480v - 2 - nc q gd gate-drain ("miller") charge v gs =10v - 8.5 - nc t d(on) turn-on delay time 3 v dd =300v - 9.5 - ns t r rise time i d =2a - 12 - ns t d(off) turn-off delay time r g =10 " , v gs =10v - 21 - ns t f fall time r d =150 " -9- ns c iss input capacitance v gs =0v - 155 - pf c oss output capacitance v ds =25v - 27 - pf c rss reverse transfer capacitance f=1.0mhz - 14 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.5v - - 2 a i sm pulsed source current ( body diode ) 1 --6 a v sd forward on voltage 3 t j =25 # , i s =2a, v gs =0v - - 1.5 v notes: 1.pulse width limited by safe operating area. 2.starting t j =25 o c , v dd =50v , l=60mh , r g =25 " , i as =2a. 3.pulse width < 300us , duty cycle < 2%. 20v 100 re v . 2.01 6/06 /200 3
www.siliconstandard.com 3 of 6 SSM02N60P fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss vs. junction fig 4. normalized on-resistance temperature vs. junction temperature 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) v g =10v i d =1a 0 0.5 1 1.5 0 5 10 15 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =10v v g =5.5v v g =6.0v v g =5.0v v g =4.5v 0 0.2 0.4 0.6 0.8 0 5 10 15 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =10v v g =5.5v v g =6.0v v g =5.0v v g =4.5v re v . 2.01 6/06 /200 3
www.siliconstandard.com 4 of 6 SSM02N60P fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance 0 10 20 30 40 50 0 50 100 150 tc, case temperature ( o c ) p d (w) 0 0.4 0.8 1.2 1.6 2 2.4 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse 0.01 0.1 1 10 1 10 100 1000 10000 v ds (v) i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms 100ms re v . 2.01 6/06 /200 3
www.siliconstandard.com 5 of 6 SSM02N60P fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v s. reverse diode junction temperature 0 1 2 3 4 5 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v) 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd (v) i s (a) t j = 150 o c t j = 25 o c 0 2 4 6 8 10 12 14 16 02468101214161820 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =2a v ds =320v v ds =400v v ds =480v 10 100 1000 1 5 9 1317212529 v ds (v) c (pf) f =1.0mhz ciss coss crss re v . 2.01 6/06 /200 3
www.siliconstandard.com 6 of 6 in formation furnished by silicon standard corporation is believed to be accurate and reliable. however, silicon standard corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. silicon standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. no license is granted, whether expressly or by im plication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of silicon standard corporation or any third parties. SSM02N60P fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.5x rated v ds to the oscilloscope - + 10 v d g s v ds v gs r g r d 0.8 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 m a re v . 2.01 6/06 /200 3
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